Diodes Incorporated has unveiled a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying just 0.6mm2 of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and with a junction to ambient thermal resistance (Rthj-a) of 256 ºC/W, supports a power dissipation of up to 1.3W under continuous conditions, double that of comparable alternatives.
The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4mm makes them particularly well suited to thin profile portable consumer electronics, including tablet PCs and smart phones. Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications.
The 20V rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of just 150mΩ, more than 50% lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation. Its p-channel companion, the 20V rated DMP21D0UFB4 offers a similar class-leading performance. Electrostatic discharge ratings of these MOSFETs is also high, at respectively 2kV and 3kV.
Further information at
Diodes Incorporated has unveiled a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying just 0.6mm2 of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and with a junction to ambient thermal resistance (Rthj-a) of 256 ºC/W, supports a power dissipation of up to 1.3W under continuous conditions, double that of comparable alternatives.
The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4mm makes them particularly well suited to thin profile portable consumer electronics, including tablet PCs and smart phones. Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications.
The 20V rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of just 150mΩ, more than 50% lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation. Its p-channel companion, the 20V rated DMP21D0UFB4 offers a similar class-leading performance. Electrostatic discharge ratings of these MOSFETs is also high, at respectively 2kV and 3kV.
Further information at www.diodes.com
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard & Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, serving the consumer electronics, computing, communications, industrial and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, amplifiers and comparators, Hall-effect sensors and temperature sensors, power management devices including LED drivers, DC-DC switching regulators, linear voltage regulators and voltage references, along with special function devices including USB power switch, load switch, voltage supervisor and motor controllers. The company's corporate headquarters are located in Dallas, Texas. A sales, marketing, engineering and logistics office is located in Westlake Village, California. Design centers are located in Dallas; San Jose, California; Taipei, Taiwan; Manchester, England and Neuhaus, Germany. The company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester; with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and a joint venture facility located in Chengdu, China. Additional engineering, sales, warehouse and logistics offices are located in Taipei; Hong Kong; Manchester and Munich, Germany, with support offices located throughout the world. For further information, including SEC filings, visit the company's website at http://www.diodes.com.
Issued on behalf of Diodes Incorporated
by EBA Communications
For further information please contact:
Stanley Leung (Diodes): (852) 2610 7932
(email: Stanley_Leung@cn.diodes.com)
Lucille Li/Andy Wong (EBA): (852) 2537 8022
(email: lucille.li@ebacomms.com or andy.wong@ebacomms.com)
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