Designed specifically for switching high power IGBTs, the ZXGD3006E6 gate driver from Diodes Incorporated helps to increase power conversion efficiency in solar inverter, motor drive and power supply applications.
The gate driver typically provides a drive current of 4A for an input current of 1mA, making it a perfect high-gain buffer stage between the high output impedance of a controller and the low input impedance of the IGBT. With an emitter-follower configuration, the ZXGD3006E6 is inherently resistant to latch-up and shoot-through issues and delivers propagation delay times of less than 10ns.
The ZXGD3006E6’s wide 40V operating range allows full enhancement of the switching device to minimize on-state losses and permits +20V to -18V gate driving to prevent dV/dt induced false triggering of IGBTs.
To enable circuit designers to better define switching characteristics for particular applications, the gate driver offers separate source and sink outputs, allowing independent control of rise and fall times. This, combined with 10 Amp peak current handling, allows for controlled charge and discharge of large gate capacitive loads which reduces the risk of EMI issues and cross conduction at higher operating frequencies.
Delivering higher pulse currents than competing devices, this rugged SOT26 packaged gate driver ensures heat dissipation is reduced, resulting in an increase in product reliability. Device pin-out has also been optimized enabling a simplification of PCB layouts and a reduction in parasitic trace inductances.
For further information visit www.diodes.com
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. The Company’s corporate headquarters, logistics center, and Americas’ sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. The Company’s wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and a joint venture facility located in Chengdu, China. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; and Munich, Germany; with support offices located throughout the world. For further information, including SEC filings, visit the Company's website at http://www.diodes.com.
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Issued on behalf of Diodes Incorporated
by EBA Communications
For further information please contact:
Johnson Tseng (Diodes): (886) 2-8914-6000
Lucille Li/Andy Wong (EBA): (852) 2537 8022
(email: firstname.lastname@example.org or email@example.com)